Introduction of Silicon Carbide Ceramic Materials
Silicon carbide (SiC) is a corrosion-resistant ceramic used in mechanical seals and pump components, maintaining strength up to 1400°C. It’s ideal for high-temperature parts in petrochemicals, aerospace, and automotive industries, driving technological advancements.
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| Plate material mm (L, H, and W can be selected as needed, customization supported) | ||||||||||||
| L | 3 | 5 | 8 | 10 | 12 | 15 | 18 | 20 | 22 | 25 | 28 | More (Customizable) |
| W*H | 100*100 | 90*140 | 95*145 | 150*150 | 160*160 | 122*290 | 110*275 | More (Customizable) | ||||
| Rod material mm (W, Ø can be selected as needed, customization supported) | ||||||||||||
| Ø | 0.5 | 0.8 | 0.9 | 1 | 1.5 | 2 | 2.5 | 3 | 3.5 | 4 | 4.5 | More (Customizable) |
| W | 60 | 100 | 120 | 200 | More (Customizable) | |||||||
Silicon carbide (SiC) is a high-performance ceramic material known for its excellent high-temperature stability, conductivity, and corrosion resistance.
1. Outstanding Strength at High Temperatures
Silicon carbide maintains its strength even at extremely high temperatures, making it an ideal choice for many high-temperature applications.
- High-Temperature Industrial Applications: Silicon carbide is widely used in high-temperature industrial fields such as furnaces, heat treatment equipment, and high-temperature reactors. Its high temperature strength and stability allow it to maintain structural integrity at temperatures up to 1400°C and even higher, enduring extreme thermal stresses and pressures.
2. Excellent Thermal and Electrical Semiconductor Performance
Silicon carbide exhibits extremely high thermal conductivity and electrical semiconductor performance, making it widely applicable in the electronics industry and high-power appliances.
- Thermal Conductivity: Silicon carbide is an excellent thermal conductor, surpassing the conductivity of many metals. This makes it very useful in applications requiring efficient heat dissipation, such as heat sinks for electronic devices and electronic packaging materials.
- Electrical Semiconductor Performance: Silicon carbide has semiconductor properties with high electron mobility and low resistivity, performing exceptionally well in power electronic devices. For instance, silicon carbide power devices exhibit lower losses and higher efficiency in high-temperature and high-frequency environments.
3. High Hardness and Corrosion Resistance
Silicon carbide possesses outstanding chemical and physical stability, demonstrating high hardness and corrosion resistance.
- High Hardness: Silicon carbide has hardness close to that of diamond, providing excellent wear resistance and scratch resistance. This makes it highly useful in manufacturing wear-resistant components and cutting tools.
- Corrosion Resistance: Due to its chemical stability, silicon carbide exhibits good corrosion resistance to many chemicals, allowing for long-term stability in chemical processing and liquid handling equipment.
The versatility and exceptional performance of silicon carbide make it widely applicable across multiple industries, including high-temperature industrial applications, electronic devices, mechanical engineering, and chemical industries. Its high temperature stability, thermal conductivity, semiconductor properties, as well as high hardness and corrosion resistance, position it as a crucial engineering material driving technological advancements and innovations in various fields.
| Type | Unit | Silicon Carbide |
| Material | \ | SiC |
| Colour | \ | Black |
| Density | g/cm3 | 3.1 |
| Type | Unit | Silicon Carbide |
| Material | \ | SiC |
| Colour | \ | Black |
| Flexural Strength(20℃) | Mpa | 400 |
| Compressive Strength(20℃) | Mpa | 2600 |
| Modulus of Elastic(young)(20℃) | Gpa | 410 |
| Tracture Toughness(20℃) | MPam½ | 4 |
| Poi sion’s Ratio(20℃) | \ | 0.16 |
| Vickers Hardness(HV1) | Gpa(kg/mm2) | 2100 |
| Rockwell Hardness(45N) | R45N | 88 |
| Type | Unit | Silicon Carbide |
| Material | \ | SiC |
| Colour | \ | Black |
| Thermal Expansion Coefficient | 10-6K-1 | 4 |
| Thermal Conductivity | W/mk | 100 |
| Thermal Shock Resistance | △T.℃ | 400 |
| Specific Heat Capacity | J/g·k | 0.67 |
| Max working Temperature(In Oxidizing) | ℃ | 1600 |
| Type | Unit | Silicon Carbide |
| Material | \ | SiC |
| Colour | \ | Black |
| Vol une Resistivity at 20℃ | Ωcm | 105 |
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